Beilstein J. Nanotechnol.2014,5, 1569–1574, doi:10.3762/bjnano.5.168
; substrate roughness; zigzaggraphenenanoribbonfieldeffecttransistor (ZGNRFET); Introduction
Field effect transistors (FETs) with a 10 nm gate length are stipulated by the International Technology Roadmap for Semiconductors (ITRS) for the year 2020 [1]. Regarding the Si scaling limits, it is obvious
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Figure 1:
Top view of a 5h-2BN-ZGNR (left panel) and the same GNR with surface roughness (right panel). The b...